^etnl-conductoi ^pioaucti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. c147 telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 the c147 silicon controlled rectifier is designed for phase control applications. this is an all-diffused device which is considerably smaller in size than comparably rated high power scr's. features: ? high dv/dt with selections available ? excellent surge and i2t ratings, providing easy fusing ? compact, hermetic package, 1/4-28 stud maximum allowable ratings type c147a c147b c147c c147d c147e c147m c147s c147n c147t c147p c147pa C147PB repetitive peak off-state voltage, vdrm> t, --40cto +125c 100 volts 200 300 400 500 600 700 800 900 1000 1100 1200 repetitive peak reverse voltage, vrrm1 tj - -40c to +125c 100 volts 200 300 400 ' 500 600 700 800 900 1000 1100 1200 non-repetitive peak reverse voltage, vrsm1 tj - +125c 150 volts 300 400 500 600 720 840 960 1080 1200 1320 1440 half sinewave waveform, 10msec. maximum pulse width. rms on-state current, it(rms) '- 63 amperes (all conduction angles) average on-state current, it(av) depends on conduction angles (see charts 2 and 3) critical rate-of-rise of on-state current (non-repetitive) di/dt:* switching from 1200 volts 100 amperes per microsecond switching from 600 volts 200 amperes per microsecond peak one-cycle surge (non-repetitive) on-state current, itsm (60 hz) 1000 amperes peak one-cycle surge (non-repetitive') on-state current, itsm (50 hz) 910 amperes i2t (for fusing), for times > 8.3 milliseconds (see figure 6) 4150 (rms ampere)2 seconds i,2t (for fusing), for times > 1.5 milliseconds (see figure 6) 2850 (rms ampere)2 seconds 'peak gate power dissipation, pgm 100 watts for 150 microseconds . average gate power dissipation, pg(av) 2 watts storage temperature, tstg -40c to +150c operating temperature, tj -40c to -h2sc maximum stud torque 30 lb.-in. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility tor any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
c147 characteristics test peak off-state and reverse current c147a c147b c147c c147d c147e c147m c147s c147n c147t c147p c147pa C147PB dc gate trigger current dc gate trigger voltage peak on-state voltage holding current critical rate-of-rise of off-state voltage, (higher values may cause device switching) symbol iprm and 'rkm ?> icjt vgt vtm ih dv/dt min. - - - - - - ? _ - - - ? - - - 0.25 - 200 typ. - - - - _ - ? - ?v - - - - _ - - - - max. 12 12 12 10 10 10 10 9 8 7 6.5 6 150 300 3 3.5 - 3 250 units ma madc vdc volts madc volts/ /jst'c test conditions tj = -40c to +125c vdrm = vrrm = 100 volts peak 200 300 400 500 600 700 800 900 1000 1100 1200 tc = 25c, vd = 12 vdc, rl = 12 ohms tc = -40c, vd = 12 vdc, rl - 12 ohms tc = 25c, vd = 12 vdc, rl = 12 ohms tc = -40c, vd = 12 vdc, rl = 12 ohms, tc = +1 25c, rated vdrm , rl = 1 000 ohms tc = +25c, itm = 500 amperes peak, 1 millisecond wide pulse. duty cycle < 1% tc = +25c, anode supply = 24 vdc, gate supply = 10v/20 ohms. initial for- ward pulse = 2 amps., 0.1 millisecond to 10 milliseconds wide. tc = +125c, rated vdrm> using linear kxponential rising waveform. gate open circuited. vdrm exponential dv/dt = (.632) higher minimum civ/dt selection available - consult factory. thermal resistance turn-off time rfljc tq - - 125 .35 c/watt /usec junction-to-case (1) tj * +12sc (2) itm = 150 amps. peak (3) vr = 50 volts min. (4) vdrm (reapplied) (5) rate-of-rise of reapplied off-state voltage = 20v/aisec (linear) (6) commutation di/dt = 5 a/^sec (7) repetition rate = 1 pps. (8) gate bias during turn-off interval * 0 volts, 100 ohms
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